1 应用范围: 研究半导体器件和半导体材料电学特性、精密测量半导体材料的载流子浓度、迁移率、电阻率、霍尔系数等重要参数
2 规 格:
2-1 Maximum sample size (Small board) - 15mm x15mm
最大样品尺寸:15mm x15mm (可定制)
2-2 Measurement Temperature: 300K (room temperature), optional 77K.
测试温度: 室温、可选配液氮低温77K
2-3 Measurement Material: Semiconductors material such as
Si, SiGe, SiC,GaAs, InGaAs, InP, GaN, ITO (N Type & P Type)
测试材质:半导体类材质、如：
Si, SiGe, SiC, ZnO, GaAs, InGaAs, InP, GaN, ITO等所有半导体薄膜(P型和N型)
2-4 Magnet Flux Density: 0.68 Tesla nominal ±1% of marked value
磁场强度: 0.68 Tesla ±1%
2-5 Magbnet Stability: ±2% over 1 years
稳定性: ±2% （一年后）
2-6 Uniformity: ± 1% over 20mm diameter from center
均匀度：± 1%(20mm直径圆范围内)
2-7 Pole Gap: 20 mm
磁极间隙：20毫米
2-8 Input voltage range: 1μV to 300V
输入电压范围：1μV ~300V
2-9 Hall voltage range: 10uV to 2000mV
霍尔电压范围: 10uV to 2000mV
2-10 Resistivity (Ohm.cm): 10-5 to 107
电阻率 (Ω.㎝): 10-5 to 107
2-11 Mobility (cm2/Volt.sec): 1 ~ 107
迁移率(cm2/Volt.sec): 1 ~ 107
2-12 Carrier Density (cm-3): 107 ~ 1021
载流子浓度(1/cm3): 107 ~ 1021 |
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